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Power Electronics Conference

Dec 2-3, 2019 | Hilton, Munich Airport

This year, our Conference about Wide Bandgap Semiconductors is split into 2 major parts:
On Dec 2nd there will be a half-day Networking event for Power Electronics experts and on Dec 3rd we will run a full-day technical conference about technical trends with Wide Bandgap Semiconductors.


Dec 2nd: Networking

The market for wide-bandgap power semiconductor devices is growing rapidly. It is expected to reach USD 3.3 billion by 2026, according to a report by Reports and Data. Main drivers are emerging applications like electric vehicles and renewable energy generation, but also enhancing of existing applications.

Our Networking event on December 2nd offers the opportunity to meet industry experts, gather information, share knowledge, network with peers and find solutions for business challenges.

2:00 pm

SiC – Status update and future outlook

Cost Reduction is the Key Development Target

For automotive application, WBG semiconductors can allow to shrink power electronics converters, to reduce battery cost, and to improve cycle reliability.
In the future, machine-integrated inverters will require new semiconductor module designs and a powertrain-wide system optimization.

Juergen Schuderer


A shift to trench based platforms in the next few years could be seen

The adoption of superjunction technology for >1200V, but MP is still a few years out. The shift to 8inch is still very much in its infancy. We have sufficient 6-inch capacity near term

Anup Bhalla

United SiC

2:40 pm

GaN – Status update and future outlook

Reliable use of GaN Devices

As has been broadly documented, some GaN failure mechanisms are different from those that occur in silicon based power transistors. How then can designers be certain that GaN devices will perform reliably in the wider range of applications into which they are now being designed? This talk will describe the approach to this problem taken by Infineon.

Tim McDonald


GaN Integrated Circuits and the Next Generation

Why GaN ICs? We have an easier design. The result show smaller size and more efficient design. In addition we receive lower EMI

Alex Lidow


3:20 pm
Coffee & more – Networking time
4:00 pm
Panel Discussion: SiC versus GaN

Both new technologies have their specific area of competence. Wide band gap devices can contribute a significant amount in new design. Both cover a specific voltage range and have a small overlap. GaN is in the range of line voltages while SiC can serve up into kilo volts.

Bodo Arlt

Bodo’s Power Systems

6:00 pm
Reception and Get-together

Networking Time with Food & Drinks

Dec 3rd: Conference

8:40 am

 It is important to get new technology in place to reduce losses in any kind of application in electronic equipment. Wide band gap devices can contribute a significant amount in new design.The two types of products cover both a specific voltage range and have a small overlap.So GaN serves up into the range of line voltages while SiC can serve kilo volts

Bodo Arlt

Bodo’s Power Systems

9:00 am
SiC Solutions for Industrial and Automotive Applications

In many power electronics-based applications, requirements like space, weight and high efficiency play an increasing role. With this development is mind, ROHM has expanded its SiC MOSFET device portfolio, where an auxiliary driver source pin enables faster switching speeds. Together with this line-up expansion, application examples from automotive and industrial fields where SiC devices offer substantial advantages will be presented.

Ignacio Lizama


9:20 am
Second Generation of SiC Power Modules

History of power modules using SiC MOSFETs and SiC SBD shows development started in 1994 with basic R&D activities till todays introduction of second generation of SiC power modules for different traditional and upcoming applications. SiC chip tech footprint by voltage classes will be presented. Driver considerations and short circuit robustness will be reviewed. Advantages of embedding of SBD into MOSFET chip, which advantages it will bring? Today available line up of SiC power modules manufactured at Mitsubishi Electric with targeted applications and next generation overview will be displayed.

Eugen Stumpf
9:40 am
Optimized Power Module Packages for SiC and its Applications

To fully utilize the performance offered by silicon carbide semiconductors (SiC) in different applications, tailored and optimized power module packages are required. Power modules for different applications and power ranges are presented and experimental results are shared. Gate drive requirements and possible implementations will be discussed. 

Robert Roesner


10:00 am
Coffee Break for individual discussion
11:00 am
Software Configurable Gate Driver Ecosystem – Reducing Time to Market

AgileSwitch has developed a complete ecosystem of Software Configurable Gate Driver Cores, Intelligent Configuration Tools and SiC Application Expertise. Our Field Tested Gate Drivers improve system efficiency and reduce EMI. Scores of engineers have saved time and money using our patented Augmented Switching technology, come and learn how you can too.

Nitesh Satheesh


11:20 am
Simplify Your Driver – Benefit of the Gate Driver

Tamura will introduce their latest gate driver solutions, which are most suitable for SiC power modules. Actually, the internal transformer has technology, which enables high-speed switching.

With over 90 years history as a transformer manufacturer for magnetic components you will have the best gate driver solutions for SiC in your hands.

Wolfgang Rath

Tamura Europe Limited

11:40 am
Design Skills of Gapped Ferrite Materials for Inductor and LLC Transformer

Magnetic component is a key factor for great power converter applications where the magnetic core loss of required resonant inductors and transformers a large part of the total power loss. Thus, the accurate core loss value is a must for prospective magnetic design. less attention is focused on the thermal dissipation effect and its impact on the material thermal performance. Besides, the uncertainty always occurs for core loss estimation on gapped cores for inductor and transformer design, LLC design is studied and analysed.

JC Sun

Bs & T

12:00 am
Lunch Break for individual discussions

First parallel session
SiC – Mature Discrete, Passives and Measurement

11:00 am
Optmized AlphaSiC MOSFETs for High System Efficiency

System performance and efficiency improvements from SiC MOSFETs require optimization of MOSFET parameters in both switching and DC losses across working temperature. The 1200V AlphaSiC MOSFETs are designed to supply this high performance while providing a high level of robustness and reliability. This presentation will describe this design philosophy, and select system performance results will be shown.

David Sheridan

Alpha & Omega Semiconductor

11:20 am
CoolSiC™ SiC MOSFETs – A Revolution to Rely on

A SiC MOSFET offers many reasons for replacing `next-best´ Si technology. In this presentation, Infineon takes the audience through the transition from Si to SiC in both emerging and established power applications. We will show that the final result at the power conversion level is dependent on a performance-based design of the SiC MOSFET product features. The pathway for highest energy efficiency and meeting the most stringent requirements in various power switching schemes is now available in a comprehensive product portfolio

Fanny Björk


11:40 am
Test Results for Packaging and Gate Driver Solutions

Littelfuse will address common industry concerns such as technology maturity, manufacturability, and reliability.

There will research and test results relating to packaging and gate driver solutions, which are critical elements in the endeavor to maximize the benefits of SiC-based power semiconductors.

Hugo Guzmán


12:00 am
Lunch Break for individual discussions
1:00 pm
Enabling and Expanding Broader Power Markets with Silicon Carbide

Using leading edge technology development to achieve both performance and cost, Wolfspeed is expanding the reach of Silicon Carbide power devices into broader applications where silicon fails to deliver. From 600V to 10kV, watts to mega watts, silicon carbide is now way past an interesting concept and is being widely adopted in all major market segments and end user systems. Wolfspeed is leading this charge with the industries commanding position both in established product offering and new technology.

Guy Moxey


1:20 pm
Introduction of Ultra-Low Rds(on) Devices

Designers are always looking to improve efficiency, reduce space, improve reliability and cost effectiveness of their power designs in applications such as EV inverters, as well as for solid state relay or circuit breaker applications. To help the designer achieve their goals, UnitedSiC will present a product family of ultra-low RDS(on), 1200V devices in the TO247 and SOT-227 package, which reduce conduction losses dramatically and provide excellent thermal characteristics. These devices will enable dramatic performance improvements in DC solid state breakers and power distribution units. The applications and characteristics of these state-of-the-art new devices will be discussed.

Anup Bhalla

United SiC

1:40 pm
Progress on SiC – Understanding Figure of Merit and Application Specific Needs

SiC technology market adaption has continued in the year 2019 – driven by renewable energy and automotive application demands.

ON Semiconductors work on SiC has yielded a wide portfolio of Diode and MosFET technology platforms with Voltage ranges 650 – 1700V. This paper investigates the features, strength and limitations of the technologies both in simulation and on the lab testbench. Moreover, we will present application examples, discuss several ruggedness aspects and present a vital new piece of SiC product collateral which accelerates customer design success.

Thomas Neyer

ON Semiconductor

2:00 pm
Modules for Electric Traction

Power semiconductor modules applied in electric vehicle traction inverters need to fulfill specific requirements with respect to costs, power density and reliability. ABB has developed a new power module platform that is optimized for these needs. Design aspects, technology selection, and performance results will be shared and discussed.

Juergen Schuderer


2:20 pm
Development of SiC Power Devices Technology

In this presentation, we will introduce the basic concept of SiC power devices and their design points, review the evolution of SiC Schottky diodes and discuss state-of-the-art SiC Schottky diode technology. We also focus on the manufacturing challenge and technology progress of SiC MOSFETs. WeEn SiC power device products and solutions will be presented as well.

Alex Cui


2:40 pm
Control Architecture Unleashes the Full Potential of Silicon Carbide

Hard-Switching is commonly-used in DC/AC power converters but it introduces switching losses which are responsible for a large percentage of power converter losses. Soft-switching minimizes switching losses but is has never been successfully-implemented for DC/AC systems with varying duty cycle, input voltage, temperature and load conditions. Pre-Switch employs Artificial Intelligence to successfully implement soft switching for the first time, minimizing switching losses and enabling users to benefit from the full potential of their transistors, independent of the FET technology. 

Christopher Rocneanu

Pre-Switch Inc

3:00 pm
Coffee Break for individual discussion
4:00 pm
High Efficiency, Compact On-Board Chargers for Industrial Electric Vehicles

The electrification of utility vehicles is growing at considerable rates. This presentation will present the development and implementation of an on board charger for utility vehicles. It uses state of the art technology for semiconductors and passive components. Particularly, the use of Silicon Carbide switches and diodes help to accomplish the requirements of this application in terms of high efficiency, low volume and weight and high reliability.

Vladimir Scarpa


Thomas Höffken

Innolectric AG

4:20 pm
SiC Value Proposition

The quality has proven reliability and ruggedness.
The supply has risk averse approach throughout the supply chain.
Our support includes standard and custom die, discrete and module options for small to large customers.

Marc Rommerswinkel


4:40 pm
Analysis of PCB Parasitic Effects in a Vienna Rectifier for an EV Battery Charge

This work investigates the impact of the PCB parasitics on the performances of a SiC three-level t-type rectifier used for electric vehicle battery chargers.  The high switching frequency and the fast raising edge of the rectifier enables a very efficient design. On the other hand, as the time derivative of the current increases (as a rule of thumb we can set 1A/ns as a breaking point), PCB parasitics start to play a significant role and, if not properly taken into account, may cause the degradation of the performances or even a design failure.  Industry standard EDA (Electronic Design Automation) tools can be used to extract a model for the PCB so that all the effects introduced by the physical realization of the board layout can be included in the analysis.  For the current work the software Advanced Design System by Keysight Technologies was used to extract an S-parameter based model of the PCB and co-simulate it with the circuit components.  Results obtained with and without the PCB model are compared for two different design iterations. 

Simon Muff


Second parallel session
GaN – Mature Discrete, Passives and Measurement

1:00 pm
Gallium Nitride in Cars: 48 V – 12 V DC-DC Conversion and LiDAR

With AEC Q101 qualified gallium nitride power transistors commercially available since 2018 there has been a wave of designs using this relatively new technology in automotive applications.  In this talk we will focus on the two largest applications, 48 V DC-DC converters, and LiDAR as used for semi-autonomous and fully autonomous vehicles.  The advantages of GaN over other technology choices as well as benchmark examples will be shown.

Alex Lidow


1:20 pm
Optimized for Performance and Price, Let’s Go GaNFast™

For GaN – or any other new technology – performance and price determine the rate of market adoption over old, traditional Si solutions. After exceeding fundamental device-performance criteria (quality/reliability, delivery/leadtime, designer knowledge/training) then system-performance metrics (efficiency, size, form-factor, standby power) are evaluated vs. system price.

GaNFast™ power ICs deliver high-frequency, high-efficiency switching in a reliable, easy-to-use “digital-in, power-out”, monolithically-integrated format. This presentation demonstrates fundamental and system performance plus system cost examples across a range of end-customer, mass-production applications.

Stephen Oliver


1:40 pm
Reliable use of GaN Devices for a Broad Range of Applications

Gallium Nitride based power conversion systems are entering the market at an accelerating rate. Initially appearing in AC:DC systems in telecom nodes and datacenters, 600V Rated GaN HEMTs are now being designed into a wider range of applications from class D audio systems to compact adapters to television sets. As has been broadly documented, some GaN failure mechanisms are different from those that occur in silicon based power transistors. How then can designers be certain that GaN devices will perform reliably in the wider range of applications into which they are now being designed?  This talk will describe the  approach to this problem taken by Infineon.

Tim McDonald


2:00 pm
Transforming the World

The role of power greatly impacts company financial performance, business competitiveness and the health of our planet. GaN power transistors play a central role in the revolution of these power systems. This session reviews how GaN Systems addresses customer challenges, provides the right solutions and tools and delivers maximum benefit.

Peter Di Maso


2:20 pm
Designing an Integrated Motor Drive with GaN

As the industry moves toward “smart factories” and the next level of automation, the demand for shrinking the size of manufacturing equipment to save floor space while reducing the amount of time required to install and commission equipment is becoming more critical. This presentation discusses how GaN is enabling the next generation of highly efficient, integrated motor drives. These solutions result in >75% reduction of factory floor cabinets while reducing power and communication cabling by more than 90%. An actual design example will be shown and discussed.

Xaver Arbinger

Texas Instruments

2:40 pm
GaN takes its place as the technology of choice for high volume power ICs

The superior efficiency of GaN transistors has made the technology interesting for power IC makers. However, until very recently, volume implementations of the technology have been few and far between. This year Power Integrations revealed that higher power members of its InnoSwitch family of flyback converter ICs and  its LYTSwitch LED driver IC family are based on the company’s own GaN technology – and have already been adopted by high volume USB-PD adapter makers for laptops and cellphones.

Balu Balakrishnan

Power Integrations

3:00 pm
Coffee Break for individual discussion
4:00 pm
Higher Voltage, Higher Power, Market Expansion; The Evolution of GaN

Though in its early stage of maturity, high-voltage GaN technology is already making great strides in the power conversion market. For example, it is currently demonstrating FIT rates similar to SiC and is in production with high volume scalability available. In this discussion, Philip Zuk from Transphorm—the manufacturer of the first qualified 650 V and 900 V GaN FETs—will explore GaN’s reliability, usability, accessibility, and practicality through the lens of the company’s successes to date. Additionally, Mr. Zuk will shed light on the adoption status of commonly targeted markets while also introducing new, viable markets made possible by the technology’s performance, reliability and manufacturability. 

Phil Zuk


4:20 pm
GaN-On-Silicon: From Switches to Intelligent Power Solutions to Boost Performance

GaN-on-Silicon power devices are recognized as a key technology to sustain future power converter systems roadmaps in the field of IT electronics, renewable solar and emission free automotive applications. Exagan implemented proprietary 200-mm’s GaN-on-Silicon technologies into high volume production to enable higher integration and improved efficiency.

Users experiences on current silicon solutions set expectations on any new product using new technology introduction. Similar “easy to use”, “predictive FIT in use” and “cost in use” are a given that needs to be part of the key attributes of the new product to meet those expectations.

G-FET™ & G-Drive™ Exagan product portfolio provides GaN-on-Silicon solutions that combine the super-fast GaN_on-Silicon switch with its appropriate driver IC controlled by embedded diagnostics, protections and, much more functionalities to become the expected modern elementary switching cell for the next century. 

Meeting user’s expectation, required reliability and cost targets, G-FET™ & G-Drive™ solutions help innovators to be able to create smaller, more efficient and higher-performing power converter applications than were possible with traditional silicon-based technology.

This paper will present the latest developments achieved and new products to be released using cost effective G-Stack™ 200-mm’s GaN-on-Silicon.

Eric Moreau


4:40 pm
Magnetic Design for GaN Devices

As the semiconductor industry moves toward higher frequencies, the design of magnetics for those systems has not risen to the challenge due to models that were designed for low-medium frequencies or to lengthy finite elements simulations. In Frenetic we change the game with the introduction of Artificial Intelligence to the power electronic world, providing accurate, fast and realistic design for any kind of semiconductor devices.

Alfonso Martínez