Power Electronics ConferenceDec 2-3, 2019 | Hilton, Munich Airport
This year, our Conference about Wide Bandgap Semiconductors is split into 2 major parts:
On Dec 2nd there will be a half-day Networking event for Power Electronics experts and on Dec 3rd we will run a full-day technical conference about technical trends with Wide Bandgap Semiconductors.
Dec 2nd: Networking
The market for wide-bandgap power semiconductor devices is growing rapidly. It is expected to reach USD 3.3 billion by 2026, according to a report by Reports and Data. Main drivers are emerging applications like electric vehicles and renewable energy generation, but also enhancing of existing applications.
Our Networking event on December 2nd offers the opportunity to meet industry experts, gather information, share knowledge, network with peers and find solutions for business challenges.
SiC – Status update and future outlook
Cost Reduction is the Key Development Target
For automotive application, WBG semiconductors can allow to shrink power electronics converters, to reduce battery cost, and to improve cycle reliability.
In the future, machine-integrated inverters will require new semiconductor module designs and a powertrain-wide system optimization.
A shift to trench based platforms in the next few years could be seen
The adoption of superjunction technology for >1200V, but MP is still a few years out. The shift to 8inch is still very much in its infancy. We have sufficient 6-inch capacity near term
GaN – Status update and future outlook
Reliable use of GaN Devices
As has been broadly documented, some GaN failure mechanisms are different from those that occur in silicon based power transistors. How then can designers be certain that GaN devices will perform reliably in the wider range of applications into which they are now being designed? This talk will describe the approach to this problem taken by Infineon.
GaN Integrated Circuits and the Next Generation
Why GaN ICs? We have an easier design. The result show smaller size and more efficient design. In addition we receive lower EMI
Coffee & more – Networking time
Panel Discussion: SiC versus GaN
Both new technologies have their specific area of competence. Wide band gap devices can contribute a significant amount in new design. Both cover a specific voltage range and have a small overlap. GaN is in the range of line voltages while SiC can serve up into kilo volts.
Bodo’s Power Systems
Reception and Get-together
Networking Time with Food & Drinks
Dec 3rd: Conference
It is important to get new technology in place to reduce losses in any kind of application in electronic equipment. Wide band gap devices can contribute a significant amount in new design.The two types of products cover both a specific voltage range and have a small overlap.So GaN serves up into the range of line voltages while SiC can serve kilo volts
Bodo’s Power Systems
SiC Solutions for Industrial and Automotive Applications
In many power electronics-based applications, requirements like space, weight and high efficiency play an increasing role. With this development is mind, ROHM has expanded its SiC MOSFET device portfolio, where an auxiliary driver source pin enables faster switching speeds. Together with this line-up expansion, application examples from automotive and industrial fields where SiC devices offer substantial advantages will be presented.
Second Generation of SiC Power Modules
History of power modules using SiC MOSFETs and SiC SBD shows development started in 1994 with basic R&D activities till todays introduction of second generation of SiC power modules for different traditional and upcoming applications. SiC chip tech footprint by voltage classes will be presented. Driver considerations and short circuit robustness will be reviewed. Advantages of embedding of SBD into MOSFET chip, which advantages it will bring? Today available line up of SiC power modules manufactured at Mitsubishi Electric with targeted applications and next generation overview will be displayed.
Optimized Power Module Packages for SiC and its Applications
To fully utilize the performance offered by silicon carbide semiconductors (SiC) in different applications, tailored and optimized power module packages are required. Power modules for different applications and power ranges are presented and experimental results are shared. Gate drive requirements and possible implementations will be discussed.
Coffee Break for individual discussion
Software Configurable Gate Driver Ecosystem – Reducing Time to Market
AgileSwitch has developed a complete ecosystem of Software Configurable Gate Driver Cores, Intelligent Configuration Tools and SiC Application Expertise. Our Field Tested Gate Drivers improve system efficiency and reduce EMI. Scores of engineers have saved time and money using our patented Augmented Switching technology, come and learn how you can too.
Simplify Your Driver – Benefit of the Gate Driver
Tamura will introduce their latest gate driver solutions, which are most suitable for SiC power modules. Actually, the internal transformer has technology, which enables high-speed switching.
With over 90 years history as a transformer manufacturer for magnetic components you will have the best gate driver solutions for SiC in your hands.
Tamura Europe Limited
Design Skills of Gapped Ferrite Materials for Inductor and LLC Transformer
Magnetic component is a key factor for great power converter applications where the magnetic core loss of required resonant inductors and transformers a large part of the total power loss. Thus, the accurate core loss value is a must for prospective magnetic design. less attention is focused on the thermal dissipation effect and its impact on the material thermal performance. Besides, the uncertainty always occurs for core loss estimation on gapped cores for inductor and transformer design, LLC design is studied and analysed.
Bs & T
Lunch Break for individual discussions
First parallel session
SiC – Mature Discrete, Passives and Measurement
Optmized AlphaSiC MOSFETs for High System Efficiency
System performance and efficiency improvements from SiC MOSFETs require optimization of MOSFET parameters in both switching and DC losses across working temperature. The 1200V AlphaSiC MOSFETs are designed to supply this high performance while providing a high level of robustness and reliability. This presentation will describe this design philosophy, and select system performance results will be shown.
Alpha & Omega Semiconductor
CoolSiC™ SiC MOSFETs – A Revolution to Rely on
A SiC MOSFET offers many reasons for replacing `next-best´ Si technology. In this presentation, Infineon takes the audience through the transition from Si to SiC in both emerging and established power applications. We will show that the final result at the power conversion level is dependent on a performance-based design of the SiC MOSFET product features. The pathway for highest energy efficiency and meeting the most stringent requirements in various power switching schemes is now available in a comprehensive product portfolio
Test Results for Packaging and Gate Driver Solutions
Littelfuse will address common industry concerns such as technology maturity, manufacturability, and reliability.
There will research and test results relating to packaging and gate driver solutions, which are critical elements in the endeavor to maximize the benefits of SiC-based power semiconductors.
Lunch Break for individual discussions
Enabling and Expanding Broader Power Markets with Silicon Carbide
Using leading edge technology development to achieve both performance and cost, Wolfspeed is expanding the reach of Silicon Carbide power devices into broader applications where silicon fails to deliver. From 600V to 10kV, watts to mega watts, silicon carbide is now way past an interesting concept and is being widely adopted in all major market segments and end user systems. Wolfspeed is leading this charge with the industries commanding position both in established product offering and new technology.
Introduction of Ultra-Low Rds(on) Devices
Designers are always looking to improve efficiency, reduce space, improve reliability and cost effectiveness of their power designs in applications such as EV inverters, as well as for solid state relay or circuit breaker applications. To help the designer achieve their goals, UnitedSiC will present a product family of ultra-low RDS(on), 1200V devices in the TO247 and SOT-227 package, which reduce conduction losses dramatically and provide excellent thermal characteristics. These devices will enable dramatic performance improvements in DC solid state breakers and power distribution units. The applications and characteristics of these state-of-the-art new devices will be discussed.
Progress on SiC – Understanding Figure of Merit and Application Specific Needs
SiC technology market adaption has continued in the year 2019 – driven by renewable energy and automotive application demands.
ON Semiconductors work on SiC has yielded a wide portfolio of Diode and MosFET technology platforms with Voltage ranges 650 – 1700V. This paper investigates the features, strength and limitations of the technologies both in simulation and on the lab testbench. Moreover, we will present application examples, discuss several ruggedness aspects and present a vital new piece of SiC product collateral which accelerates customer design success.
Modules for Electric Traction
Power semiconductor modules applied in electric vehicle traction inverters need to fulfill specific requirements with respect to costs, power density and reliability. ABB has developed a new power module platform that is optimized for these needs. Design aspects, technology selection, and performance results will be shared and discussed.
Development of SiC Power Devices Technology
In this presentation, we will introduce the basic concept of SiC power devices and their design points, review the evolution of SiC Schottky diodes and discuss state-of-the-art SiC Schottky diode technology. We also focus on the manufacturing challenge and technology progress of SiC MOSFETs. WeEn SiC power device products and solutions will be presented as well.
Control Architecture Unleashes the Full Potential of Silicon Carbide
Hard-Switching is commonly-used in DC/AC power converters but it introduces switching losses which are responsible for a large percentage of power converter losses. Soft-switching minimizes switching losses but is has never been successfully-implemented for DC/AC systems with varying duty cycle, input voltage, temperature and load conditions. Pre-Switch employs Artificial Intelligence to successfully implement soft switching for the first time, minimizing switching losses and enabling users to benefit from the full potential of their transistors, independent of the FET technology.
Coffee Break for individual discussion
High Efficiency, Compact On-Board Chargers for Industrial Electric Vehicles
The electrification of utility vehicles is growing at considerable rates. This presentation will present the development and implementation of an on board charger for utility vehicles. It uses state of the art technology for semiconductors and passive components. Particularly, the use of Silicon Carbide switches and diodes help to accomplish the requirements of this application in terms of high efficiency, low volume and weight and high reliability.
SiC Value Proposition
The quality has proven reliability and ruggedness.
The supply has risk averse approach throughout the supply chain.
Our support includes standard and custom die, discrete and module options for small to large customers.
Analysis of PCB Parasitic Effects in a Vienna Rectifier for an EV Battery Charge
This work investigates the impact of the PCB parasitics on the performances of a SiC three-level t-type rectifier used for electric vehicle battery chargers. The high switching frequency and the fast raising edge of the rectifier enables a very efficient design. On the other hand, as the time derivative of the current increases (as a rule of thumb we can set 1A/ns as a breaking point), PCB parasitics start to play a significant role and, if not properly taken into account, may cause the degradation of the performances or even a design failure. Industry standard EDA (Electronic Design Automation) tools can be used to extract a model for the PCB so that all the effects introduced by the physical realization of the board layout can be included in the analysis. For the current work the software Advanced Design System by Keysight Technologies was used to extract an S-parameter based model of the PCB and co-simulate it with the circuit components. Results obtained with and without the PCB model are compared for two different design iterations.
Second parallel session
GaN – Mature Discrete, Passives and Measurement
Gallium Nitride in Cars: 48 V – 12 V DC-DC Conversion and LiDAR
With AEC Q101 qualified gallium nitride power transistors commercially available since 2018 there has been a wave of designs using this relatively new technology in automotive applications. In this talk we will focus on the two largest applications, 48 V DC-DC converters, and LiDAR as used for semi-autonomous and fully autonomous vehicles. The advantages of GaN over other technology choices as well as benchmark examples will be shown.
Optimized for Performance and Price, Let’s Go GaNFast™
For GaN – or any other new technology – performance and price determine the rate of market adoption over old, traditional Si solutions. After exceeding fundamental device-performance criteria (quality/reliability, delivery/leadtime, designer knowledge/training) then system-performance metrics (efficiency, size, form-factor, standby power) are evaluated vs. system price.
GaNFast™ power ICs deliver high-frequency, high-efficiency switching in a reliable, easy-to-use “digital-in, power-out”, monolithically-integrated format. This presentation demonstrates fundamental and system performance plus system cost examples across a range of end-customer, mass-production applications.
Reliable use of GaN Devices for a Broad Range of Applications
Gallium Nitride based power conversion systems are entering the market at an accelerating rate. Initially appearing in AC:DC systems in telecom nodes and datacenters, 600V Rated GaN HEMTs are now being designed into a wider range of applications from class D audio systems to compact adapters to television sets. As has been broadly documented, some GaN failure mechanisms are different from those that occur in silicon based power transistors. How then can designers be certain that GaN devices will perform reliably in the wider range of applications into which they are now being designed? This talk will describe the approach to this problem taken by Infineon.
Transforming the World
The role of power greatly impacts company financial performance, business competitiveness and the health of our planet. GaN power transistors play a central role in the revolution of these power systems. This session reviews how GaN Systems addresses customer challenges, provides the right solutions and tools and delivers maximum benefit.
Peter Di Maso
Designing an Integrated Motor Drive with GaN
As the industry moves toward “smart factories” and the next level of automation, the demand for shrinking the size of manufacturing equipment to save floor space while reducing the amount of time required to install and commission equipment is becoming more critical. This presentation discusses how GaN is enabling the next generation of highly efficient, integrated motor drives. These solutions result in >75% reduction of factory floor cabinets while reducing power and communication cabling by more than 90%. An actual design example will be shown and discussed.
GaN takes its place as the technology of choice for high volume power ICs
The superior efficiency of GaN transistors has made the technology interesting for power IC makers. However, until very recently, volume implementations of the technology have been few and far between. This year Power Integrations revealed that higher power members of its InnoSwitch family of flyback converter ICs and its LYTSwitch LED driver IC family are based on the company’s own GaN technology – and have already been adopted by high volume USB-PD adapter makers for laptops and cellphones.
Coffee Break for individual discussion
Higher Voltage, Higher Power, Market Expansion; The Evolution of GaN
Though in its early stage of maturity, high-voltage GaN technology is already making great strides in the power conversion market. For example, it is currently demonstrating FIT rates similar to SiC and is in production with high volume scalability available. In this discussion, Philip Zuk from Transphorm—the manufacturer of the first qualified 650 V and 900 V GaN FETs—will explore GaN’s reliability, usability, accessibility, and practicality through the lens of the company’s successes to date. Additionally, Mr. Zuk will shed light on the adoption status of commonly targeted markets while also introducing new, viable markets made possible by the technology’s performance, reliability and manufacturability.
GaN-On-Silicon: From Switches to Intelligent Power Solutions to Boost Performance
GaN-on-Silicon power devices are recognized as a key technology to sustain future power converter systems roadmaps in the field of IT electronics, renewable solar and emission free automotive applications. Exagan implemented proprietary 200-mm’s GaN-on-Silicon technologies into high volume production to enable higher integration and improved efficiency.
Users experiences on current silicon solutions set expectations on any new product using new technology introduction. Similar “easy to use”, “predictive FIT in use” and “cost in use” are a given that needs to be part of the key attributes of the new product to meet those expectations.
G-FET™ & G-Drive™ Exagan product portfolio provides GaN-on-Silicon solutions that combine the super-fast GaN_on-Silicon switch with its appropriate driver IC controlled by embedded diagnostics, protections and, much more functionalities to become the expected modern elementary switching cell for the next century.
Meeting user’s expectation, required reliability and cost targets, G-FET™ & G-Drive™ solutions help innovators to be able to create smaller, more efficient and higher-performing power converter applications than were possible with traditional silicon-based technology.
This paper will present the latest developments achieved and new products to be released using cost effective G-Stack™ 200-mm’s GaN-on-Silicon.
Magnetic Design for GaN Devices
As the semiconductor industry moves toward higher frequencies, the design of magnetics for those systems has not risen to the challenge due to models that were designed for low-medium frequencies or to lengthy finite elements simulations. In Frenetic we change the game with the introduction of Artificial Intelligence to the power electronic world, providing accurate, fast and realistic design for any kind of semiconductor devices.