Conference Program

Wide Bandgap Conference 2020


December 8: SiC - Technical Trends & more (Session 1)

Add to Calendar
13:30 CET

(Paris Time)

7:30am EST

(New York Time)

Conference Opening

Bodo Arlt, Editor-in-Chief, Bodo's Power Systems

13:45 CET
7:45am EST


(S1) SiC Enabling Long Term Global Market Growth

Guy Moxey, Senior Director of Power Products, Wolfspeed

It is widely realized that SiC is now an established technology that is transforming the power industry in many applications across the industrial, energy and automotive segments - from watts to megawatts. So the conversations within the market are no longer what is SiC or how do I use it?; the conversations now have pivoted to how do I ensure getting continuity of supply and what is the long term reliability of this technology. Reliability is not just qualification, supply assurance is not just product today. In this presentation Wolfspeed will discuss the mechanisms behind its SiC qualification, realization of differences between SiC and silicon with regards to qual & rel, its compressive proven long term reliability and how this related to a 30X increase in both material and end wafer fabrication over the next series of years.

14:00 CET
8:00am EST

(S2) New Generation of SiC Power Devices for Industrial and Automotive Applications

Dr.-Ing.Ignacio Lizama,  Field Application Engineer, ROHM

 In many power electronics-based applications, requirements like space, weight and high efficiency play an increasing role. With this development is mind, ROHM has expanded its SiC MOSFET device portfolio with the latest generation of SiC devices, where the new devices enables faster switching speeds and lower switching losses. Together with this line-up expansion, the benefits of the new generation of SiC devices will be presented.

14:15 CET
8:15am EST

Q&A and Live Discussion about Presentations S1 and S2

Live talk with the Speakers of the Presentation S1 and S2, moderated by Bodo Arlt

14:45 CET
8:45am EST

(S3) 1.2kV SiC Power MOSFETs with High-k Gate Dielectrics and Superior Threshold Voltage Stability

Stephan Wirths, R&D Senior Engineer, Hitachi ABB Power Grids

Despite the recent progress in SiC power MOSFET technology and its commercialization, the defective MOS interface still hampers the exploitation of the full potential of these devices. We have developed a high-k gate stack technology on SiC that shows significantly reduced density of interface states (Dit) and consequently substantially improved on-state performance for 1.2kV SiC MOSFETs. Additionally, we have demonstrated superior threshold voltage (VTH) stability, i.e. virtually no VTH-shift during static characterization as function of the starting gate voltage and its ramp. These developments have been recently awarded with the IEEE ISPSD 2020 poster award.

15:00 CET
9:00am EST

(S4) Breakthrough performance of UnitedSiC’s 750V Gen 4 SiC FETs

Dr. Anup Bhalla, VP of Engineering, UnitedSiC

The introduction of the UnitedSiC Gen 4 750V SiC FETs, based on an advanced JFET technology with an R(DS)A of only 0.7mohm-cm2, includes multiple new SiC FETs with breakthrough cost-performance options ideal for power conversion applications from datacenters, telecom rectifiers, and EV on-board chargers, to DC-DC converters, UPS and solar inverters. All UnitedSiC Gen 4 SiC FET devices can be used with a 0 to +12V gate drive, feature a 5V V(th) with a +/-20V gate rating, and include input ESD protection. The excellent third quadrant diode behavior and ultra-low Qrr makes the device excellent for hard-switched circuits, and the low Coss(tr) makes it ideal for soft-switched circuits. We will examine the comparative figures of merit for the new 18mohm, 750V Gen 4 device, its performance in Totem-Pole PFC, and show the planned roadmap for the Gen 4 product portfolio.

15:15 CET
9:15am EST

(S5) Compact Full Bridge SiC Module for EV Charger Applications

Max Josef Kell, Research Engineer, Danfoss

Danfoss Silicon Power has developed a new full bridge, full silicon carbide power module. With its voltage rating of 1200 V and current rating of 130 A it is predestined for applications in the range of 50 kW and above, possible applications being an EV fast-charger or higher power on-board chargers in commercial vehicles. The full bridge layout in a single module saves space and allows system designers to achieve higher power densities. The layout and performance of the module is verified by the help of circuit simulation, with a special attention to the current sharing among the four paralleled silicon carbide chips. Certain design measures are implemented to make the module both robust and easy to use. The characteristics of the module are proven through laboratory double-pulse tests under various operating conditions.

15:30 CET
9:30am EST

(S6) Reliability Considerations for SiC Power Modules

Marcus Lippert, Business Development Manager, StarPower

Reliable packaging technologies are key for widespread adaptation of power modules with SiC chip configuration. A key benchmark test is power cycling as it gives a good indication on the potential life time of the module in the field. StarPower will present power cycling results of its SiC Mosfet module range. Attendees will be provided with an overview on power cycling capabilities of current chip and packaging technologies as well as an outlook of the next step packaging improvements to further increase reliability of SiC based modules.

15:45 CET
9:45am EST

Q&A and Live Discussion about Presentations S3, S4, S5 and S6

Live talk with the Speakers of the Presentation S3,S4, S5 and S6, moderated by Bodo Arlt

December 8: GaN - Technical Trends & more

Add to Calendar
13:30 CET

(Paris Time)

7:30am EST

(New York Time)

Conference Opening

Bodo Arlt, Editor-in-Chief, Bodo's Power Systems

13:45 CET
7:45am EST


(G1) Easy Design Tips to Maximize Performance in Your GaN Designs

Alex Lidow Ph.D., CEO, EPC

GaN transistors are very similar in behavior to the aging power MOSFETs, and therefore power systems engineers can use their design experience to take advantage of the performance enhancements possible with GaN. In this presentation we are going to cover some of the primary design issues we see in the field with designers using GaN for the first time; First we will discuss optimal layout techniques for improved performance, then we will review some simple and inexpensive heatsinking techniques to extract even more power out of your GaN designs, and lastly we will show how the use of GaN transistors along with good design techniques can result in better EMI than achieved with power MOSFETs.

14:00 CET
8:00am EST

(G2) High-Reliability, High-Performance Fast Charging using GaNFast Power ICs

Stephen Oliver, VP Corporate Marketing & Investor Relations, Navitas Semiconductor

GaNFast power ICs are self-contained, integrated, easy-to-use “digital-in, power-out” building blocks. For practical system design, they deliver:
• High-frequency, high-efficiency performance.
• Fast time to prototype, qualification, certification and mass production.
• Built-in device- and system-reliability features (6M+ shipped with zero failures).
OEM examples will be presented showing 3x faster charging in half the size and weight of silicon.

14:15 CET
8:15am EST

(G3) 200mm/8-Inch GaN Power Device and GaN-IC Technology to Unleash Your Power IC Technology

Denis Marcon, Senior Business Development Manager, IMEC

Today, GaN-on-Si is well accepted as a break-through power electronics technology. Imec has available a solid 8-inch/200mm GaN-on-Si e-mode platform that is continuously improved in terms of performance and reliability for 100, 200V and 650V power switching applications. Next to this, imec is also enabling the next generations of GaN technologies with higher level of integration and suitable for wide voltage ranges. In this talk, imec will review the status of imec’s 8-inch/200mm GaN-on-Si e-mode device technology and how key challenges were tackled and solved. Moreover, imec’s GaN-IC technology will be explained and examples of what is possible to realize with such technology will be shown.

14:30 CET
8:30am EST

(G4) GaN Transistors: High Performance and High Reliability

Peter Di Maso, GaN Systems

With increasing demand for renewable energy and storage, e-mobility and data consumption, the industry is faced with design challenges around high efficiency, high power density and lower system costs. GaN power transistors play a central role in this revolution by enabling the creation of smaller, lighter, lower cost, more efficient, and high reliability power systems that are free from the limitations imposed by yesterday’s silicon-based solutions. Peter Di Maso, will speak about how GaN power transistors have become a significant part of addressing industry’s challenges in performance and reliability.

14:45 CET
8:45am EST

(G5) GaN Devices Improve Ruggedness & Enable Innovative Power Supply Design

Mike Matthews, VP of Product Development, Power Integrations

The high efficiency of GaN switches is well understood which is leading to the rapid uptake of the technology in the marketplace. A further benefit – which is perhaps less well documented – is that GaN devices based on technologies such as Power Integrations’ PowiGaN™ process offer increased ruggedness: the increased operating voltage of GaN eliminates the need for designers to rely on MOSFET avalanche when managing mains surges and swells, reducing the chance of damage to the primary switch. The high efficiency GaN switch improves thermal performance leading to improved reliability, and also enables new power designs. An example is the MinE-CAP™ IC which dramatically reduces bulk capacitor size, eliminates inrush stress, and simplifies the design of power supplies for worldwide applications.

15:00 CET
9:00am EST

Q&A and Live Discussion about Presentations G1, G2, G3, G4 and G5

Live talk with the Speakers of the Presentation G1, G2, G3, G4 and G5, moderated by Bodo Arlt

15:30 CET
9:30am EST

(G6) Is GaN the key to smaller, lighter designs HEV/EV designs?

Xaver Arbinger, Texas Instruments

Today, designers of electric vehicle powertrain systems are challenged with reducing size, weight and cost of the onboard charger (OBC), high-voltage DC/DC converter and traction inverter – even as the power rating of these sub-systems is pushing upwards. Lighter electric vehicles travel further on a full-battery, while a higher power rating delivers faster charging times and higher vehicle performance. It is no secret that one way to achieve smaller size is by cranking up the operating frequency of the switching power electronics and shrinking the passive components such as inductors, transformers and capacitors.

15:45 CET
9:45am EST

(G7) Increasing the Practicality of Design Using GaN Semiconductors

Philip Zuk, VP of Worldwide Technical Marketing, Transphorm

Cascode is a decades-old, well-known solution that was once used in switch mode power supplies to increase efficiency. While some wide bandgap power semiconductors explore the use of alternative solutions—cascode still serves as an ideal, practical configuration for a high performance, high reliability GaN power transistor. This presentation will outline design benefits enabled by cascode as demonstrated by Transphorm’s notable generation-over-generation improvements achieved. Explained in the context of comparable alternative WBG technologies such as e-mode GaN or SiC, example benefits will include:
- TO-xxx packages for maximum thermal performance and cost
- No Kelvin source requirement
- Wide gate safety margin with silicon-like threshold voltage (best-in-class gate noise immunity)
- Collectively, these advantages and others lead to simple RDDR: Reliability, Designability, Drivability, and Reproducibility.

16:00 CET
10:00am EST

(G8) Emergence of GaN Technology in USB C Power Delivery Adapters

Sinjin Dixon-Warren, TechInsights

Energy efficiency regulation is driving innovation in the USB wall charger market. The USB-C power delivery standard aims to provide variable charging power up to 100 W (e.g. 20 V and 5 A), so that a single AC adapter can be used to charge a wide variety of devices. TechInsights has seen an increasing number of gallium nitride (GaN) design wins in wall charger technology, and we will present on the GaN integration strategies we have observed in recently procured USB adapters.

16:15 CET
10:15am EST

(G9) Next Generation HV Power GaN Technology and the Benefits of Copper-Clip SMD Packaging

Dr. Dilder Chowdhury, Strategic Marketing Director, Nexperia

Addressing the many design challenges todays engineers face with high performance, high power and high frequency designs, in this session we look at Nexperia’s next-generation HV power GaN FET technology. Including the innovative CCPAK package, a low parasitic, high-performance power package designed with all copper-clip technology, also providing enhanced reliability and ease of SMD manufacturing.

16:30 CET
10:30am EST

Q&A and Live Discussion about Presentations G6, G7, G8 and G9

Live talk with the Speakers of the Presentation G6, G7, G8 and G9, moderated by Bodo Arlt

17:00 CET
11:00am EST

(G10) Why D-Mode and specifically D3GaN for High Voltage E-Drive automotive systems

Elijah Bunin, Product Manager & Technical Sales, Visic Tech

Not all GaN devices are the same, and each has its own advantages. D-Mode GaN technology has been proven for years as suitable for automotive applications and this presentation will discuss how VisIC D3GaN is perfectly suitable to address the growing automotive market. From multi-kW charging applications to Hundreds of kW for Inverters, from Tens of kHz to Hundreds, D-Mode GaN devices can provide safe and efficient solutions while addressing the various requirements of each application. Among the topics discussed will be Short circuit protection, gate drive circuits, Paralleling, and high-power packaging.

17:15 CET
11:15am EST

(G11) Pitfalls of GaN gate-driving and a solution for maximizing the performance of GaN power stages

Mike Wens, Managing Director, MinDCet

GaN technology is driving higher power densities and enabling smaller power supplies. However, despite the intrinsically higher switching speeds of GaN transistors compared to the best MOSFET technologies, the gate-driver remains the limiting factor in GaN-based Switched-Mode Power Supplies (SMPS) performance. This presentation demonstrates the pitfalls of GaN gate-driving and MinDCet’s solution for maximizing the performance of GaN power stages, including a future look toward monolithic GaN ICs.

17:45 CET
11:45am EST

Q&A and Live Discussion about Presentations G10 and G11

Live talk with the Speakers of the Presentation G10 and G11, moderated by Bodo Arlt

December 9: Passives, Driver Boards, Measurement & more

Add to Calendar
13:30 CET

(Paris Time)

7:30am EST

(New York Time)

Conference Opening

Bodo Arlt, Editor-in-Chief, Bodo's Power Systems

13:45 CET
7:45am EST


(P1) Maximising SiC performance in EVs

Bruce Renouard, CEO, Pre-Switch

The holy grail for EV designers is increased range. More range requires greater efficiency in both the inverter and the motor drive systems. In the past, switching losses were kept low in the inverter which compromised motor efficiency. Now, Pre-Switch has developed an embedded AI which for the first time enables soft switching to be employed in DC/AC inverters. The resulting SiC-based inverters have virtually no switching losses. This unleashes inverter switching speeds of 100 kHz which reduces sine wave distortion, thereby increasing motor efficiency. The main benefits are reduced size/cost of the SiC needed for an inverter, a higher efficiency inverter AND a 10x reduction motor current distortion. EV range is predicted to be increased by 5-12%. This presentation includes test data showing the near-total elimination of switching losses and three-dimensional graphs of system level inverter efficiencies of 99% at 100kHz in Pre-Switch’s 200kVA CleanWave inverter reference.

14:00 CET
8:00am EST

(P2) Gate Driver Module that brings out the Performance of All-SiC Power Modules

Wolfgang Rath, Tamura

Tamura will outline their product portfolio to bring out the features and performance of All-SiC power modules

14:15 CET
8:15am EST

Q&A and Live Discussion about Presentations P1 and P2

Live talk with the Speakers of the Presentation P1 and P2, moderated by Bodo Arlt

15:15 CET
9:15am EST

(P3) From Device Modeling to Characterization

 Simon Muff, Keysight

A complete end to end design flow for SiC devices half bridge design: By using I-V curve tracer and double pulse test results on a SIC device a modified Angelov model was generated, which was used to simulate the overshoot and ringing in the time domain of a half bridge test board. The layout parasitic effects of the printed circuit boards have been taken into consideration by an EM extracted model (S-parameters) used in co-simulation within the transient simulation, including an adoption of the models for passive elements and active devices. The modeling approach was proven as well as the accuracy of the whole design flow to predict the device behavior on any application board by simulation before building a prototype.

15:30 CET
9:30am EST

(P4) Measurement challenges with Wideband Gap Semiconductor devices

Bernd Wessling, Tektronix

Floating differential measurements (such as high-side Vgs) are difficult or impossible to make due to high frequency (fast turn on and turn off), and the presence of high common mode voltages (such as Vds) affecting oscilloscope probes which do not have enough common mode rejection at high bandwidth. The poor common mode rejection leads to the measurement being dominated by the common mode error instead of the actual differential signal. This presentation will look at CMRR issues and the utilization of traditional versus galvanically isolated differential Probes for measuring GaN and SiC devices.

15:45 CET
9:45am EST

(P5) Magnetics Valiation for WBG Application

JC Sun, BS&T

WBG enables faster, more power, the reliability and efficiency of the wbg system are very much pending on magnetics, Bs&T provides the validation technique of magnetic material, cores and components, and provides the data for simulation and modelling, if magnetics not get done, NOTHING get done!

16:00 CET
10:00am EST

(P6) Using AI for Designing Magnetics in WBG Devices

Alfonso Martínez, CMO, Frenetic

As the semiconductor industry moves toward higher frequencies, the design of magnetics for those systems has not risen to the challenge due to models that were designed for low-medium frequencies or to lengthy finite elements simulations. In Frenetic we change the game with the development of a web-based software that uses Artificial Intelligence for providing accurate, fast, and realistic design for any kind of semiconductor devices.

16:15 CET
10:15am EST

Q&A and Live Discussion about Presentations P3, P4, P5 and P6

Live talk with the Speakers of the Presentation P3, P4, P5 and P6, moderated by Bodo Arlt


December 9: SiC - Technical Trends & more (Session 2)

Add to Calendar
13:30 CET

(Paris Time)

7:30am EST

(New York Time)

Conference Opening

Bodo Arlt, Editor-in-Chief, Bodo's Power Systems

13:45 CET
7:45am EST


(S11) CoolSiC™ MOSFETs for Fanless Servo Drives

Michael Voelkl, Infineon

The CoolSiC™ 1200 V, SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses and 3 µs SCWT (short-circuit withstand time) of CoolSiC™ technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies

14:00 CET
8:00am EST

(S12) ACEPACK SMIT: A Molded Module Solution for Power Applications

Vladimir Scarpa, EMEA Technical Marketing Manager, STMicroelectronics

This presentation will introduce ACEPACK™ SMIT package, a molded module for power applications offered by STMicroelectronics. Several design related topics will be discussed, like assembly hints for connecting the heat-sink, and possible thermal interface materials. Finally, planned product portfolio and some application examples will also be presented.

14:15 CET
8:15am EST

(S13) Practical Aspects in Automotive Applications

Jan Huijink, Technical Marketing Manager,WeEn Semiconductors

We show what WeEn Semiconductors can deliver for Automotive charging applications, like stationary EV Chargers and onboard chargers (OBC). We will look at schematics, application design aspects and the test and measurement of the WeEn SiC (Silicon Carbide) Schottky diodes and SiC MOSFETs.

14:30 CET
8:30am EST

(S14) Reducing Size, Noise, and Field Failures of Transportation APUs

Kevin Speer, Nitesh Satheesh, and Marc Rommerswinkel, Microchip

The needs to shrink the size and soften the sound of today’s transportation auxiliary power units (APUs) have met a roadblock: Silicon IGBTs are lossy and incapable of switching the required power at frequencies above the audible range. High-voltage SiC MOSFETs allow designers to extend switching frequency well above 20 kHz, arresting noise and dramatically reducing the size of transformers; moreover, heat sinks may be downsized thanks to diminished light-load conduction losses and slashed switching losses. This article reports a total SiC MOSFET solution unifying three key pieces: MOSFETs designed for rugged operation to reduce field failure; low inductance power package for optimal efficiency and heat sink miniaturization; and digital gate driver for intelligent protection, control, and ease of system optimization.

14:45 CET
8:45am EST

(S15) How to kill a SiC MOSFET – Errors in Gate Circuit Design

Martin Warnke, Mehrdad Baghaie Yazdi, ON Semiconductor

Using SiC MOSFETs in various topologies can lead to great improvements in performance and efficiency, however if not used correctly engineers can quickly find themselves frustrated with failures. These failures are often, quite in contrast to the perception of the customers, no intrinsic weaknesses of the SiC MOSFET technology but in the design choices around the gate loop. Particularly the lack of attention to the turn-on interactions between the high side and low side device can result in catastrophic failures excited by wrong circuit choices. In this paper, we show that classical dampening efforts using gate source capacitors in the gate circuit loop are a great hazard and an often hidden killer of SiC MOSFET gates. This practice of dampening oscillations on the gate, in order to improve switching transients actually results in heavy stress on the gate. This stress is not easily visible through measurements, as they occur on the internal gate node and not on the external measurable one, which thanks to the CGS seems nicely dampened. We show in simulation and test how these errors can be mitigated and where conceptual mistakes of “dampening” can be omitted.

15:00 CET
9:00am EST

Q&A and Live Discussion about Presentations S11, S12, S13, S14 and S15

Live talk with the Speakers of the Presentation S11, S12, S13, 14 and S15, moderated by Bodo Arlt

15:30 CET
9:30am EST

(S16) SiC MOSFET Intelligent Power Module Platform for E-Mobility Applications

Pierre Delatte, CTO, CISSOID

The talk will present a 3-Phase 1200V SiC MOSFET Intelligent Power Module platform co-integrating a liquid-cooled power module with a robust gate driver. This plug-and-play solution aims accelerating the time-to-market for E-Mobility. This power module family delivers continuous current up to 600A with On-resistance down to 2.2mOhms. The presentation will explain how SiC MOSFET driving challenges are solved and how electrical and thermal modelling help to estimate conduction and switching losses for optimal thermal design.

15:45 CET
9:45am EST

(S17) High Precision Measurement with Smallest Components and Lowest Resistance Values

Thomas Otto, Head of Application Management, Isabellenhütte

With our latest products Wax and FMx we close the gap of high precision and power shunts in smallest designs by having lowest resistance values at the same time. Get latest technical feature and production updates and discuss with our Product Expert the requirements for Automotive, White Goods, Power Tools and Industrial applications.

16:00 CET
10:00am EST

(S18) Next Generation Cooling Technology

Chris Rocneanu Foxy Power/IQ Evolution

IQ Evolution designs and manufactures 3D-printed, tailor-made, and standard high-performance coolers made of stainless steel for power electronics applications. With heat flux densities of over 200W/cm², very low thermal resistance, and optimized by artificial intelligence, IQ Evolution has not yet found any application that it cannot cool.

16:15 CET
10:15am EST

(S19) SiC processing at a foundry – Challenges and Opportunities

By Agnes Jahnke, Product Marketing Manager SiC & GaN, X-FAB Semiconductor Foundries

The Silicon Carbide Market is dominated by the large IDMs like Infineon and Cree Wolfspeed but a growing number of fabless companies or design houses requires to create their own Silicon Carbide FETs or diodes, that meet the specific requirements of their customers applications. X-FAB is a the largest SiC-foundry in the world to offer an access to the Silicon Carbide device processing with a business model to enable fast time to market and high performance devices.

17:00 CET
11:00am EST

Q&A and Live Discussion about Presentations S16, S17, S18 and S19

Live talk with the Speakers of the Presentation S16, S17, S18 and S19, moderated by Bodo Arlt