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Power Electronics Conference 2020

Technical Trends with Wide Bandgap Devices

Power Electronics is rapidly moving towards Wide Bandgap, because the key for the next essential step in energy efficiency lies in the use of new materials, such as GaN (gallium nitride) and SiC (silicon carbide) which allow for greater power efficiency, smaller size, lighter weight and lower overall cost.

Wide Bandgap Semiconductors are transforming power electronics designs across many applications such as data centers, renewable energy, automotive and many more.  This conference will not only explain why, how and where this is happening, but also offer the opportunity to meet industry experts, gather information and share knowledge & experiences.

The Conference is organized by Aspencore in cooperation with Bodo’s Power Systems and provides a networking platform to share experiences, discuss technical trends, and network with each other.

The event is split into 2 major parts:

  1. Networking Event with Industry Experts
    Monday, 14th Dec 2020, starting at 2:00pm

    At the half-day networking event on Dec. 14, delegates will have the opportunity to meet industry experts, gather information, share knowledge and network with peers. In the evening there will be a Reception and Get-together.
  2. Technical Conference with Table-Top Exhibition
    Tuesday, 15th Dec 2020, starting at 9:00am

    During the full-day technical conference on Dec. 15 attendees will gain the knowledge necessary to make informed decisions on which wide-bandgap materials, platforms, and devices can best serve their requirements in current or upcoming designs.


December 14-15, 2020


Hilton Hotel, Munich Airport

The challenges for the Power Semiconductor

Market analysis companies estimate growth in the market of power components using WBG (wide bandgap) technology – namely SiC and GaN. Driven by the demand for power supplies, inverters for photovoltaics and hybrid and electric vehicles, the market for power components in SiC and GaN technologies will exceed $10 billion in 2027.

The prospects for strong growth in SiC devices are high, stimulated by the increasing sales of plug-in hybrid and electric vehicles. Market penetration is widening with Schottky diodes, MOSFETs, JFETs and other discrete SiCs already seen in DC-DC automotive converters, already in volumes, and on-board battery chargers.

Our technical conference will explain why, how and where this is happening. Conference delegates will be provided with the knowledge necessary to make their decisions on where, how and which Wide Bandgap platforms and devices can play a role in current or upcoming designs.