Power Electronics Conference 2019

The annual gathering of Power Electronics Specialists

Power Electronics is rapidly moving towards Wide Bandgap Semiconductors, as the key for the next essential step in energy efficiency lies in the use of new materials, such as GaN (gallium nitride) and SiC (silicon carbide) which allow for greater power efficiency, smaller size, lighter weight and lower overall cost.

 

Book a Ticket now

Wide Bandgap Semiconductors are transforming power electronics designs across many applications including data centers, renewable energy and automotive as well as many others.

Our technical conference will explain why, how and where this is happening.  Conference delegates will be provided with the knowledge necessary to make their decisions on where, how and which Wide Bandgap platforms and devices can play a role in current or upcoming designs.

When?

December 2-3, 2019

Where?

Hilton Hotel, Munich Airport

The challenges for the Power Semiconductor

Market analysis companies estimate growth in the market of power components using WBG (wide bandgap) technology – namely SiC and GaN. Driven by the demand for power supplies, inverters for photovoltaics and hybrid and electric vehicles, the market for power components in SiC and GaN technologies will exceed $10 billion in 2027.

The prospects for strong growth in SiC devices are high, stimulated by the increasing sales of plug-in hybrid and electric vehicles. Market penetration is widening with Schottky diodes, MOSFETs, JFETs and other discrete SiCs already seen in DC-DC automotive converters, already in volumes, and on-board battery chargers.

Our technical conference will explain why, how and where this is happening. Conference delegates will be provided with the knowledge necessary to make their decisions on where, how and which Wide Bandgap platforms and devices can play a role in current or upcoming designs.

Book your ticket for the 2019 Power Electronics Conference today!

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