Wide Band Gap is no Mystery

The areas historically served by silicon devices have in recent years been taken over more often by Wide Band Gap Devices. The Power Electronics Conference is an excellent opportunity to meet experts and share expertise in bringing down barriers and overcoming reluctance to use these new semiconductors.

We are facing higher switching frequency and higher operating temperatures. Wide Band Gap Semiconductors can accommodate these increasing demands by permitting better performance than today’s silicon. Passive components from heat sinks, capacitors and coils get smaller. The overall benefit is reduced sizes for the total systems in all applications. However, the challenges are having improved measurement equipment available and to analyze the designs correctly.

Leading wide band gap companies together with companies from the test and measurement area will join us for a deep insight into designing with GaN and SiC.

 

Programme Overview (Preliminary)

Time

GaN ICs, SiC Modules, Simulation and Measurement

09h00

Introduction & Welcome
Bodo Arlt, Bodo's Power

09h15 Thermal Management of GaN Power Semiconductors in SMD-Package
Dr.-Ing. Marvin Tannhäuser, Siemens
09h40 GaN Power ICs: Integration Drives Performance
Steven Oliver, Navitas
10h05

SiC Solution for Industrial Auxiliary Power Supply
Christian Felgemacher, Rohm

10h30

Details about this Paper will follow soon
Semikron

10h45

Coffee Break

11h15

Make the most out of SiC!
Alexander Streibel, Danfoss

11h10

Details about this Paper will follow soon

11h30

Measuring SiC Current Transients with Rogowski Current Transducers
Chris Hewson, PEM

 

SiC - Discrete, Passives and Measurement

GaN - Discrete, Passives and Measurement

13h15

Details about this Paper will follow soon
Fanny Björk, Infineon

Details about this Paper will follow soon

13h40

USCi product update Cascode
Anup Balah, USCi

Rdyn in hard-switch and soft-switch applications
Marnix Tack or Peter Moens, ON semi

14h05

Putting active and passive SiC Power devices into action Performance and Robustness
Thomas Neyer, ON Semi

Details about this Paper will follow soon
Tim McDonald, Infineon

14h30

Accelerating Adoption: Practical, Ready-to-Use SiC Devices and Circuit Solutions that Enable Better, More Efficient Power Systems 
Guy Moxey, Cree, Wolfspeed

GaN Brings About a New Way of Thinking
Steve Colino, EPC

14h55

Coffee Break

15h25

Details about this Paper will follow soon
Ranbir Singh, GeneSic

Practical Solutions Design with GaN
Jim Witham, GaN Systems

15h50

Uncover and Overcome the Challenges of High Switching Speeds with SIC
Kevin Speer, Littelfuse

Practical Design Considerations for a 3.3kW Bridgeless Totem-pole PFC Using GaN FETs
Jim Honea, Transphorm

16h15

New concepts of capacitor designs in power electronics
Thomas Ebel, F&T cap

Measurement
Teledyne LeCroy

16h40

Details about this Paper will follow soon
Yokogawa

Measurement
ZES Zimmer

Programme Details

GaN ICs, SiC Modules, Simulation and Measurement

09h00 - 09h15
Introduction & Welcome
Speaker: Bodo Arlt, Bodo's Power

09h15 - 09h40
Thermal Management of GaN Power Semiconductors in SMD-Package
Speaker: Dr.-Ing. Marvin Tannhäuser, Siemens
Novel GaN power semiconductors with very high switching speed enables future power electronics with higher switching frequencies and higher integration. Therefore a low inductance design is often in conflict to the thermal requirements. The paper will show an application view for the thermal management of SMD devices regarding appropriate thermal equivalent circuit, top- vs. bottom-cooled devices and optimized layout concerning capacitive coupling and thermal conductivity in the PCB.

09h40 - 10h05
GaN Power ICs: Integration Drives Performance

Speaker: Steven Oliver, Navitas
Wide bandgap GaN has superb performance but early implementations (e.g. cascoded dMode or discrete eMode) need complex, expensive control and protection, which limited application advances and market adoption. Now, monolithic AllGaN™ integration of logic, drive and powertrain drives speed and efficiency in power conversion. With easy-to-use, high-speed, “digital-in, power-out” 650 V GaN Power ICs,designers can achieve 3x power density increases at the same or lower BOM costs than typical old and slow Si systems.

10h05 - 10h30
SiC Solution for Industrial Auxiliary Power Supply

Speaker: Christian Felgemacher, Rohm
Industrial power converter systems such as uninterruptible power supplies and motor drives need an auxiliary supply unit. This auxiliary supply unit provides the required power for a wide range of system components such as sensors, controllers, fans and gate drivers. Typically, flyback converters are used to derive this power from high voltage AC or DC inputs (e.g. 3~ 480VAC). If standard silicon devices are used as power switches in these converters the complexity of the circuits is either very high or have low efficiencies. These issues can be overcome using a high performance 1700V SiC MOSFET. In this presentation a simple and performant solution for an auxiliary supply solution based on a ROHM SiC MOSFET and a purpose built quasi-resonant control IC will be shown.

10h30 - 10h45
Details about this Paper will follow soon
Semikron

11h15 - 11h10
Make the most out of SiC!

Speaker: Alexander Streibel, Danfoss
Danfoss Silicon Power offers experience in customizing of power modules and excellent application know-how to cover SiC challenges. SiC is not predicted to replace pure silicon, but it is mainly requested if either inverter losses are very costly or if the package size is crucial within high power applications. In this speech, Danfoss shows up key issues in SiC power module design.

11h35 - 12h15
Measuring SiC Current Transients with Rogowski Current Transducers
Speaker: Chris Hewson, PEM
The change to SiC semiconductor devices necessitate improvements to Rogowski current transducers to reject capacitive coupled interference from larger voltage transients whilst maintaining a capability to measure faster rise-times of 20ns or less with a predictable delay, operate at higher temperatures and maintain a small package size without compromising ease of use. Practical improvements are outlined


SiC - Discrete, Passives and Measurement

13h15 - 13h40
Details about this Paper will follow soon

Speaker: Fanny Björk, Infineon
Details about this Paper will follow soon

13h40 - 14h05
USCi product update Cascode
Speaker: Anup Balah, USCi
USCi will provide an update on the market outlook for the 650V and 1200V Cascode discrete devices. The key application areas, performance and ease of use aspects will be discussed. We will also provide an update on 6inch based product releases from USCi, as well as new high current diode and stack cascode devices for EV applications.

14h05 - 14h30
Putting active and passive SiC Power devices into action Performance and Robustness

Speaker: Thomas Neyer, ON Semi
The Performance and Robustness will be shown for the devices

14h30 - 14h55
Accelerating Adoption: Practical, Ready-to-Use SiC Devices and Circuit Solutions that Enable Better, More Efficient Power Systems
Speaker: Guy Moxey, Cree, Wolfspeed
Wolfspeed will present and discuss several real-life, system-level examples working for our current customers--today. We’ll share how SiC devices have solved common challenges that designers face when shackled to traditional silicon devices. The practical, real, and ready-to-use circuit solutions discussed will span watts to hundreds of kW. Each solution will highlight our commercially available, fully qualified SiC devices, proven within the market to enable significant value to systems with regards to efficiency, power density, and cost. The market has heard for many years about WBG product roadmaps and concepts, touting what possibilities could be available. However, you can’t design in a PowerPoint presentation or a preliminary datasheet, so this session will reinforce that Wolfspeed SiC power has moved beyond the hype, talk, and fake news. We’ll showcase SiC devices that are widely used today and how they solve real issues.

15h25 - 15h50
Details about this Paper will follow soon

Speaker: Ranbir Singh, GeneSic
Details about this Paper will follow soon

15h50 - 16h15
Uncover and Overcome the Challenges of High Switching Speeds with SIC
Speaker: Kevin Speer, Littelfuse
With SiC's capability for much higher switching speeds, challenges have been uncovered that went unnoticed with slower silicon IGBTs, including excessive transient voltage spikes, oscillations and EMI, optimization of passives, and adequate measurement methodologies. How can innovations in packaging, layout, passives, and measurement practices unleash the myriad benefits of SiC?

16h15 - 16h40
New concepts of capacitor designs in power electronics

Speaker: Thomas Ebel, F&T cap
FTCAP has invented and patented a new concept of film capacitor designs called “Fischer Link” as an assembly of film capacitors were the winding is directly mounted (soldered) to the busbar. Saving space by this method leads to a higher power density, to cost saving effects and the big advantage of significantly lower inductances compared to standard screwed capacitor busbar assemblies.

16h40 - 17h05
Details about this Paper will follow soon
Speaker: Yokogawa
Details about this Paper will follow soon


GaN - Discrete, Passives and Measurement

13h40 - 14h05
Rdyn in hard-switch and soft-switch applications
Speaker: Marnix Tack or Peter Moens, ON semi
A specific feature of GaN HEMT technologies is the degradation of Rdson during switching, the so called dynamic Rdson (Rdyn). The presentation will briefly review the basic physics behind Rdyn and focus on characterization techniques and results obtained by ON Semiconductor for 650V GaN HEMT devices. More specifically the difference in Rdyn behaviour in hard-switch and soft-switch applications will be demonstrated and discussed.

14h05 - 14h30
Details about this Paper will follow soon

Speaker: Tim McDonald, Infineon
Details about this Paper will follow soon

14h30 - 14h55
GaN Brings About a New Way of Thinking
Speaker: Steve Colino, EPC
Wide bandgap semiconductors, such as GaN, provide a new level of speed and size providing designers with system alternatives that were not possible with silicon based semiconductors.  The increase in speed allows much higher frequencies and voltages to be switched efficiently. This paper will explore the progress of enhancement mode GaN, and some of the different ways of thinking that are possible.

15h25 - 16h50
Practical Solutions Design with GaN

Speaker: Jim Witham, GaN Systems
Ranging from 20 Watts to 20 kilowatts, GaN Systems will demonstrate that many of the same design techniques used in legacy products can be applied to new designs with only a few minor changes. Emphasis will be placed on topologies, passive component selection, driver selection, and EMI and thermal analysis.

15h50 - 16h15
Practical Design Considerations for a 3.3kW Bridgeless Totem-pole PFC Using GaN FETs
Speaker: Jim Honea, Transphorm
Gallium Nitride (GaN) FETs, with their fast switching and low reverse recovery charge, are the key to practical bridgeless totem-pole power factor correction (PFC) designs. To successfully take advantage of the simplicity and efficiency offered by the topology, however, a number of practical design issues must be considered. In this presentation, a 3.3kW continuous-conduction mode PFC will be used as a basis to study the GaN half bridge configuration itself along with the gate drive and layout, PFC inductor, EMI filter, surge suppression, and algorithm implementation.

16h15 - 16h40
Measurement

Speaker: Teledyne LeCroy
Details about this Paper will follow soon

16h40 - 17h05
Measurement
Speaker: ZES Zimmer
Details about this Paper will follow soon